R6012JNX Nch 600V 12A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.390Ω ±12A 60W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-220FM lInner circuit lApplication Switching applications lPackaging .
1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant
lOutline
TO-220FM
lInner circuit
lApplication Switching applications
lPackaging specifications Packing
Tube
Packing code
C7 G
Marking
R6012JNX
Basic ordering unit (pcs)
2000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID
*1 ±12 A
Pulsed drain current
IDP
*2 ±36 A
Gate - Source voltage
VGSS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R6012ANJ |
Rohm |
Drive Nch MOSFET | |
2 | R6012ANX |
Rohm |
Drive Nch MOSFET | |
3 | R6012FNX |
Rohm |
Drive Nch MOSFET | |
4 | R601 |
Powerex Power Semiconductors |
General Purpose Rectifier | |
5 | R601 |
Okaya |
Coil Filters | |
6 | R6010ANX |
Rohm |
Drive Nch MOSFET | |
7 | R6010MND3 |
ROHM |
MOSFET | |
8 | R6010MNX |
INCHANGE |
N-Channel MOSFET | |
9 | R6010MNX |
ROHM |
Power MOSFET | |
10 | R6011ENJ |
INCHANGE |
N-Channel MOSFET | |
11 | R6011ENJ |
ROHM |
Power MOSFET | |
12 | R6011ENX |
INCHANGE |
N-Channel MOSFET |