R6012FNX - Rohm

R6012FNX Drive Nch MOSFET

Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage 　 VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy. 14.0 2.5 Features 1) Fast reverse recovery time (trr) 15.0 12.0.

Features

1) Fast reverse recovery time (trr) 15.0 12.0 8.0 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6
Application Switching
 Inner circuit
Packaging specifications Type R6012FNX Package Code Basic ordering unit (pieces) Bulk 500  ∗1 www.DataSheet.co.kr (1) (2) (3) (1) Gate (2) Drain (3) Source 1 BODY DIODE
Absolute maximum ratings (Ta  25°C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Power dissipation (Tc=25C) Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% .