R6010MND3 - ROHM

R6010MND3 MOSFET

R6010MND3 　　Nch 600V 10A Power MOSFET 　　 Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline 　 RDS(on)(Max.) 0.380Ω ID ±10A TO-252 PD 143W 　 　　　　　　 lFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free.

Features

1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6010M Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID
*1 ±.