R6012ANX - Rohm

R6012ANX Drive Nch MOSFET

R6012ANX Transistors 10V Drive Nch MOSFET R6012ANX zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 15.0 12.0 8.0 2.5 1.3 1.2 14.0 0.8 (1)Base.

Features

1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 15.0 12.0 8.0 2.5 1.3 1.2 14.0 0.8 (1)Base (2)Collector (3)Emitter 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Switching zPackaging specifications www.DataSheet.co.kr zInner circuit Bulk − 500 ∗1 Package Type Code Basic ordering unit (pieces) R6012ANX zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total p.