Q62702-A926 - Siemens Semiconductor Group

Q62702-A926 Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching)

Silicon Schottky Diodes q q BAT 68 … For mixer applications in the VHF/UHF range For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 68 BAT 68-04 Marking 83 84 Ordering Code Pin Configuration (tape and reel) Q62702-A926 Q62702-A4 Package1) SOT-23 BAT 68-05 85 Q62702-A15 BAT 68-06 86 Q62702-A.

Features

  – 55 … + 150 Unit V mA mW ˚C 750 590 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 2 BAT 68 … Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 10 µA Reverse current VR = 1 V VR = 1 V, TA = 60 ˚C Forward voltage 1) IF = 1 mA IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Symbol min. VBR IR
  –
  – VF
  –
  – CT rf
  –
  –
  –
  –
  –
  – 340 500 1 10 pF Ω
  –
  – 0.1 1.2 mV 8 Values typ.
  – max.
  – V µA .