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Q62702-A926 |
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| Part Number | Q62702-A926 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Silicon Schottky Diodes q q BAT 68 … For mixer applications in the VHF/UHF range For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 68 BA... |
| Features |
– 55 … + 150 Unit V mA mW ˚C 750 590 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 2 BAT 68 … Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 10 µA Reverse current VR = 1 V VR = 1 V, TA = 60 ˚C Forward voltage 1) IF = 1 mA IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Symbol min. VBR IR – – VF – – CT rf – – – – – – 340 500 1 10 pF Ω – – 0.1 1.2 mV 8 Values typ. – max. – V µA ... |
| Document |
 Q62702-A926 Data Sheet
PDF 101.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-A920 |
Siemens Semiconductor Group |
Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) |
|
| 2 | Q62702-A921 |
Siemens Semiconductor Group |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series) |
|
| 3 | Q62702-A922 |
Siemens Semiconductor Group |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
|
| 4 | Q62702-A910 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
|
| 5 | Q62702-A911 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
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