Q62702-A922 - Siemens Semiconductor Group

Q62702-A922 Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode)

Silicon Low Leakage Diode Array Low-leakage applications q Medium speed switching times q Common anode q BAW 156 Type BAW 156 Marking JZs Ordering Code (tape and reel) Q62702-A922 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS.

Features

= 70 V VR = 70 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr
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  – 2 0.5
  – 3 pF µs Values typ. max. Unit V(BR) VF 70
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  – V mV
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  – IR
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  – 900 1000 1100 1250 nA 5 80 Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF Semiconductor Group 2 BAW 156 Forward current IF = f (TA
*; TS)
* Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA .