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Q62702-A1201 - Siemens Semiconductor Group

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Q62702-A1201 NPN Silicon Switching Transistor Array

SMBT 3904S NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP) 4 5 6 2 1 3 VPS05604 Type SMBT 3904S Marking Ordering Code s1A Q62702-A1201 Pin Configuration Packag.

Features

ter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. 50 Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE 40 60 6 - V I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 DC current gain 1) nA - I C = 100 µA, V CE = 1 V I C = 1 mA, V CE = 1 V I C = 10 mA, VCE = 1 V I C = 50 mA, VCE = 1 V I C = 100 mA, V CE = 1 V Collector-emitter saturation voltage1) 40 70 100 60 30 - 300 V VCEsat 0.2 0.3 0.85 0.95 I C = 10 mA, I B = 1 mA I C = 50 mA, I B .

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