Q62702-A1239 - Siemens Semiconductor Group

Q62702-A1239 Silicon Switching Diode Preliminary data (For high-speed switching applications)

BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type BAS 16-02W Marking 3 Ordering Code Q62702-A1239 Pin Configuration 1=A 2=C Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 119 .

Features

30 50 1.75 V Vfr I F = 10 mA, t p = 20 ns AC characteristics Diode capacitance CD t rr - - 2 6 pF ns VR = 0 V, f = 20 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00016 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF Semiconductor Group Semiconductor Group 22 Jul-24-1998 1998-11-01 BAS 16-02W Forward current IF = f V F) Reverse current IR = f (TA) T A = 25°C BAS 16 EHB00023 150 BAS 16 EHB00022 Ι F mA ΙR .