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Q62702-A1201 |
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| Part Number | Q62702-A1201 |
| Manufacturer | Siemens Semiconductor Group |
| Description | SMBT 3904S NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching i... |
| Features |
ter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. 50
Unit
V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE
40 60 6 -
V
I C = 1 mA, I B = 0
Collector-base breakdown voltage
I C = 10 µA, IB = 0
Emitter-base breakdown voltage
I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0
DC current gain 1)
nA -
I C = 100 µA, V CE = 1 V I C = 1 mA, V CE = 1 V I C = 10 mA, VCE = 1 V I C = 50 mA, VCE = 1 V I C = 100 mA, V CE = 1 V
Collector-emitter saturation voltage1)
40 70 100 60 30
-
300 V
VCEsat
0.2 0.3 0.85 0.95
I C = 10 mA, I B = 1 mA I C = 50 mA, I B ... |
| Document |
 Q62702-A1201 Data Sheet
PDF 79.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-A120 |
Siemens Semiconductor Group |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
|
| 2 | Q62702-A1200 |
Siemens Semiconductor Group |
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) |
|
| 3 | Q62702-A1202 |
Siemens Semiconductor Group |
PNP Silicon Switching Transistor Array |
|
| 4 | Q62702-A121 |
Siemens Semiconductor Group |
SILICON PIN DIODES |
|
| 5 | Q62702-A121 |
Siemens Semiconductor Group |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
|