Q62702-A1231 - Siemens Semiconductor Group

Q62702-A1231 Silicon Switching Diode Preliminary data (For high-speed switching applications)

BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VPS05176 Type BAS 16-03W Marking B Ordering Code Q62702-A1231 Pin Configuration 1=A 2=C Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 111.

Features

rrent - - 715 855 1000 1250 1 µA IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 75 V, TA = 150 °C Forward recovery voltage - - 30 50 1.75 V Vfr - I F = 10 mA, t p = 20 ns AC characteristics Diode capacitance CD t rr - - 2 6 pF ns VR = 0 V, f = 20 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00017 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF Semiconductor Group Semiconductor Group 22 Mar-.