PMZB290UNE2 - NXP

PMZB290UNE2 N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Ultra thin package profi.

Features

• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• Ultra thin package profile of 0.37 mm 3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C Min Typ Max Unit - - 20 V -8 - 8V .