PMZB150UNE - NXP

PMZB150UNE N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Ultra thin package profil.

Features

• Very fast switching
• Low threshold voltage
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection: 2 kV HBM
• Ultra thin package profile of 0.37 mm 3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C Min Typ Max Unit - - 20 V -8 - 8V [.