PMZB1200UPE - nexperia

PMZB1200UPE P-channel MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Ultra thin package profi.

Features

• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• Ultra thin package profile of 0.37 mm height 3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -410 mA; Tj = 25 °C [1] Min Typ Max Unit - - .