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PMZB290UNE2 |
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| Part Number | PMZB290UNE2 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be... |
| Features |
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Ultra thin package profile of 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C Min Typ Max Unit - - 20 V -8 - 8V ... |
| Document |
 PMZB290UNE2 Data Sheet
PDF 221.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMZB290UNE |
NXP Semiconductors |
single N-channel Trench MOSFET |
|
| 2 | PMZB290UNE2 |
nexperia |
N-channel MOSFET |
|
| 3 | PMZB290UN |
NXP Semiconductors |
single N-channel Trench MOSFET |
|
| 4 | PMZB200UNE |
NXP |
N-channel Trench MOSFET |
|
| 5 | PMZB200UNE |
nexperia |
N-channel MOSFET |
|