Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Fast switching Low conduction losses due to low on-state resistance Saves PCB space du.
Fast switching Low conduction losses due to low on-state resistance Saves PCB space due to small footprint (90 % smaller than SOT23) Suitable for use in compact designs due to low profile (55 % lower than SOT23) 1.3 Applications Driver circuits Switching in portable appliances 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C Tamb = 25 °C; VGS = 10 V; see Figure 1 Tamb = 25 °C; see Figure 2 VGS = 4.5 V; ID = 0.2 A; Tj =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMZ1200UPE |
NXP |
P-channel Trench MOSFET | |
2 | PMZ1200UPE |
nexperia |
P-channel MOSFET | |
3 | PMZ130UNE |
NXP |
N-channel Trench MOSFET | |
4 | PMZ130UNE |
nexperia |
N-channel MOSFET | |
5 | PMZ200UNE |
NXP |
N-channel Trench MOSFET | |
6 | PMZ200UNE |
nexperia |
N-channel MOSFET | |
7 | PMZ250UN |
NXP Semiconductors |
N-channel TrenchMOS extremely low level FET | |
8 | PMZ270XN |
NXP Semiconductors |
N-channel TrenchMOS extremely low level FET | |
9 | PMZ290UNE |
nexperia |
N-channel MOSFET | |
10 | PMZ290UNE |
NXP |
N-channel Trench MOSFET | |
11 | PMZ290UNE2 |
NXP |
N-channel Trench MOSFET | |
12 | PMZ290UNE2 |
nexperia |
N-channel MOSFET |