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PMZ1000UN |
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| Part Number | PMZ1000UN |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
| Features |
Fast switching Low conduction losses due to low on-state resistance Saves PCB space due to small footprint (90 % smaller than SOT23) Suitable for use in compact designs due to low profile (55 % lower than SOT23)
1.3 Applications
Driver circuits Switching in portable appliances
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C Tamb = 25 °C; VGS = 10 V; see Figure 1 Tamb = 25 °C; see Figure 2 VGS = 4.5 V; ID = 0.2 A; Tj =... |
| Document |
 PMZ1000UN Data Sheet
PDF 114.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMZ1200UPE |
NXP |
P-channel Trench MOSFET |
|
| 2 | PMZ1200UPE |
nexperia |
P-channel MOSFET |
|
| 3 | PMZ130UNE |
NXP |
N-channel Trench MOSFET |
|
| 4 | PMZ130UNE |
nexperia |
N-channel MOSFET |
|
| 5 | PMZ200UNE |
NXP |
N-channel Trench MOSFET |
|