PMZ270XN - NXP Semiconductors

PMZ270XN N-channel TrenchMOS extremely low level FET

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching 1.3 Applications I Driver circuits I DC-to-DC converters I Load switching in portable .

Features

I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching 1.3 Applications I Driver circuits I DC-to-DC converters I Load switching in portable appliances 1.4 Quick reference data I VDS ≤ 20 V I RDSon ≤ 340 mΩ I ID ≤ 2.15 A I Ptot ≤ 2.50 W 2. Pinning information Table 1. Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 3 2 Transparent top view G G mbb076 mbb076 Simplified outline Symbol D D SOT883 (SC-101) S S NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FE.