PMZ130UNE - NXP

PMZ130UNE N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small packag.

Features

• Very fast switching
• Low threshold voltage
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection: 2 kV HBM
• Leadless ultra small package: 1.0 × 0.6 × 0.48 mm 3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 1.8 A; Tj = 25 °C Min Typ Max Unit - - 20 V .