PMEG2010EV - NXP Semiconductors

PMEG2010EV Low VF MEGA Schottky barrier diode

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. 1 2 3 handbook, halfpage 6 PMEG2010EV PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION 5 4 1, 2 5, 6 3, 4 MHC310 Marking code: F1. Fig.1 Simplified .

Features

• Forward current: 1 A
• Reverse voltage: 20 V
• Very low forward voltage
• Ultra small SMD package
• Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. 1 2 3 handbook, halfpage 6 PMEG2010EV PINNING PIN 1 2 3 4 5 6 cathode cath.