PMEG2010EV |
Part Number | PMEG2010EV |
Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
Description | Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. 1 2 3 handbook, halfpage 6 ... |
Features |
• Forward current: 1 A • Reverse voltage: 20 V • Very low forward voltage • Ultra small SMD package • Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS • Low voltage rectification • High efficiency DC/DC conversion • Switch mode power supply • Inverse polarity protection • Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. 1 2 3 handbook, halfpage 6 PMEG2010EV PINNING PIN 1 2 3 4 5 6 cathode cath... |
Document |
PMEG2010EV Data Sheet
PDF 86.66KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | PMEG2010EA |
Philips |
Low VF (MEGA) Schottky barrier diode | |
2 | PMEG2010EH |
nexperia |
MEGA Schottky barrier rectifiers | |
3 | PMEG2010EJ |
nexperia |
MEGA Schottky barrier rectifiers | |
4 | PMEG2010EPA |
nexperia |
MEGA Schottky barrier rectifier | |
5 | PMEG2010EPK |
NXP Semiconductors |
low VF MEGA Schottky barrier rectifier |