PMEG2010AEB - NXP Semiconductors

PMEG2010AEB 20V 1A ultra low VF MEGA Schottky barrier rectifier

cathode anode DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. Top view col001 Marking code: L6. The marking bar indicates the cathode. Fig.1 Simplified outline (SOD523; SC-79) and symbol. ORDE.

Features

• Forward current: 1.0 A
• Reverse voltage: 20 V
• Ultra low forward voltage
• Ultra small SMD package. PINNING APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Voltage clamping
• Inverse-polarity protection
• Low power consumption applications. 1 2 PMEG2010AEB QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage MAX. 1 20 UNIT A V PIN 1 2 DESCRIPTION cathode anode DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-7.