Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection. PMEG2010EPA is encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. 1.2 Features Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 20 V .
Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 20 V Low forward voltage Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability AEC-Q101 qualified 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications Battery chargers for mobile equipment 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol Parameter .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMEG2010EPK |
NXP Semiconductors |
low VF MEGA Schottky barrier rectifier | |
2 | PMEG2010EA |
Philips |
Low VF (MEGA) Schottky barrier diode | |
3 | PMEG2010EH |
nexperia |
MEGA Schottky barrier rectifiers | |
4 | PMEG2010EJ |
nexperia |
MEGA Schottky barrier rectifiers | |
5 | PMEG2010ER |
nexperia |
MEGA Schottky barrier rectifier | |
6 | PMEG2010ET |
nexperia |
MEGA Schottky barrier rectifiers | |
7 | PMEG2010EV |
NXP Semiconductors |
Low VF MEGA Schottky barrier diode | |
8 | PMEG2010AEB |
NXP Semiconductors |
20V 1A ultra low VF MEGA Schottky barrier rectifier | |
9 | PMEG2010AEB |
nexperia |
1A low VF MEGA Schottky barrier rectifier | |
10 | PMEG2010AEH |
NXP |
MEGA Schottky barrier rectifiers | |
11 | PMEG2010AEJ |
NXP |
1A very low VF MEGA Schottky barrier rectifer | |
12 | PMEG2010AEJ |
nexperia |
MEGA Schottky barrier rectifier |