Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features I I I I I I Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 20 V Low forward voltage High power capability due t.
I I I I I I Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 20 V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package 1.3 Applications I I I I I Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol IF(AV) Parameter average forward current Conditions square wave; δ = 0.5; f = 20 kHz Tamb ≤ 125 °C Tsp ≤ 140 °C .
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMEG2010BEA |
NXP Semiconductors |
1A very low VF MEGA Schottky barrier rectifier | |
2 | PMEG2010BEA |
nexperia |
Schottky barrier rectifier | |
3 | PMEG2010BELD |
nexperia |
MEGA Schottky barrier rectifier | |
4 | PMEG2010BEV |
NXP Semiconductors |
1A very low VF MEGA Schottky barrier rectifier | |
5 | PMEG2010AEB |
NXP Semiconductors |
20V 1A ultra low VF MEGA Schottky barrier rectifier | |
6 | PMEG2010AEB |
nexperia |
1A low VF MEGA Schottky barrier rectifier | |
7 | PMEG2010AEH |
NXP |
MEGA Schottky barrier rectifiers | |
8 | PMEG2010AEJ |
NXP |
1A very low VF MEGA Schottky barrier rectifer | |
9 | PMEG2010AEJ |
nexperia |
MEGA Schottky barrier rectifier | |
10 | PMEG2010AET |
NXP |
MEGA Schottky barrier rectifiers | |
11 | PMEG2010EA |
Philips |
Low VF (MEGA) Schottky barrier diode | |
12 | PMEG2010EH |
nexperia |
MEGA Schottky barrier rectifiers |