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PMEG2010AEB |
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| Part Number | PMEG2010AEB |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | cathode anode DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra s... |
| Features |
• Forward current: 1.0 A • Reverse voltage: 20 V • Ultra low forward voltage • Ultra small SMD package. PINNING APPLICATIONS • Low voltage rectification • High efficiency DC/DC conversion • Voltage clamping • Inverse-polarity protection • Low power consumption applications. 1 2 PMEG2010AEB QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage MAX. 1 20 UNIT A V PIN 1 2 DESCRIPTION cathode anode DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-7... |
| Document |
 PMEG2010AEB Data Sheet
PDF 81.50KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PMEG2010AEB |
nexperia |
1A low VF MEGA Schottky barrier rectifier |
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| 2 | PMEG2010AEH |
NXP |
MEGA Schottky barrier rectifiers |
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| 3 | PMEG2010AEJ |
NXP |
1A very low VF MEGA Schottky barrier rectifer |
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| 4 | PMEG2010AEJ |
nexperia |
MEGA Schottky barrier rectifier |
|
| 5 | PMEG2010AET |
NXP |
MEGA Schottky barrier rectifiers |
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