PARAMETER forward current reverse voltage 1 20; 30; 40 MAX. UNIT A V APPLICATIONS • High efficiency DC-to-DC conversion • Voltage clamping • Protection circuits • Low voltage rectification • Blocking diodes • Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated gua.
• Forward current: 1 A
• Reverse voltages: 20 V, 30 V, 40 V
• Very low forward voltage
• Ultra small and very small plastic SMD package
• Power dissipation comparable to SOT23.
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PMEGXX10BEA; PMEGXX10BEV
QUICK REFERENCE DATA SYMBOL IF VR PINNING PIN PMEGXX10BEA (see Fig.1) 1 2 PMEGXX10BEV (see Fig.2) 1, 2, 5, 6 3, 4 cathode anode cathode anode DESCRIPTION PARAMETER forward current reverse voltage 1 20; 30; 40 MAX. UNIT A V
APPLICATIONS
• High efficiency DC-to-DC conversion
• Voltage clamping
• Protection circuits
• Low voltage rectification
• Blocking diodes
• Low power con.
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMEG2010BELD |
nexperia |
MEGA Schottky barrier rectifier | |
2 | PMEG2010BER |
NXP |
1A Low Vf MEGA Schottky Barrier Rectifier | |
3 | PMEG2010BER |
nexperia |
MEGA Schottky barrier rectifier | |
4 | PMEG2010BEV |
NXP Semiconductors |
1A very low VF MEGA Schottky barrier rectifier | |
5 | PMEG2010AEB |
NXP Semiconductors |
20V 1A ultra low VF MEGA Schottky barrier rectifier | |
6 | PMEG2010AEB |
nexperia |
1A low VF MEGA Schottky barrier rectifier | |
7 | PMEG2010AEH |
NXP |
MEGA Schottky barrier rectifiers | |
8 | PMEG2010AEJ |
NXP |
1A very low VF MEGA Schottky barrier rectifer | |
9 | PMEG2010AEJ |
nexperia |
MEGA Schottky barrier rectifier | |
10 | PMEG2010AET |
NXP |
MEGA Schottky barrier rectifiers | |
11 | PMEG2010EA |
Philips |
Low VF (MEGA) Schottky barrier diode | |
12 | PMEG2010EH |
nexperia |
MEGA Schottky barrier rectifiers |