PPJS6603 30V Complementary Enhancement Mode MOSFET Voltage 30 / -30V Current 4.4 /-2.9A SOT-23 6L Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-2.
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: SC3
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJS6600 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
2 | PJS6601 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
3 | PJS6602 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
4 | PJS6630 |
Pan Jit International |
P-MOSFET Load Switch | |
5 | PJS6631 |
Pan Jit International |
P-MOSFET Load Switch | |
6 | PJS6400 |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
7 | PJS6401 |
Pan Jit International |
P-Channel Enhancement Mode MOSFET | |
8 | PJS6404 |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
9 | PJS6405 |
Pan Jit International |
P-Channel Enhancement Mode MOSFET | |
10 | PJS6413 |
PAN JIT |
20V P-Channel MOSFET | |
11 | PJS6414 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
12 | PJS6415AE |
Pan Jit International |
P-Channel MOSFET |