PPJS6415AE 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -4.9A SOT-23 6L-1 Features RDS(ON) , VGS@-10V, [email protected]<60mΩ RDS(ON) , [email protected], [email protected]<70mΩ RDS(ON) , [email protected], [email protected]<96mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc ESD Protected 2KV HBM Lead fr.
RDS(ON) , VGS@-10V, [email protected]<60mΩ
RDS(ON) , [email protected], [email protected]<70mΩ
RDS(ON) , [email protected], [email protected]<96mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
ESD Protected 2KV HBM
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: S5E
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
oth.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJS6413 |
PAN JIT |
20V P-Channel MOSFET | |
2 | PJS6414 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
3 | PJS6416 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
4 | PJS6400 |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
5 | PJS6401 |
Pan Jit International |
P-Channel Enhancement Mode MOSFET | |
6 | PJS6404 |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
7 | PJS6405 |
Pan Jit International |
P-Channel Enhancement Mode MOSFET | |
8 | PJS6600 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
9 | PJS6601 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
10 | PJS6602 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
11 | PJS6603 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
12 | PJS6630 |
Pan Jit International |
P-MOSFET Load Switch |