PJS6413 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -4.4A Features RDS(ON) , [email protected], [email protected]<82mΩ RDS(ON) , [email protected], [email protected]<110mΩ RDS(ON) , [email protected], [email protected]<146mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2.0 Green molding com.
RDS(ON) , [email protected], [email protected]<82mΩ
RDS(ON) , [email protected], [email protected]<110mΩ
RDS(ON) , [email protected], [email protected]<146mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: SOT-23 6L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: S13
SOT-23 6L
Unit : inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage G.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJS6414 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
2 | PJS6415AE |
Pan Jit International |
P-Channel MOSFET | |
3 | PJS6416 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
4 | PJS6400 |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
5 | PJS6401 |
Pan Jit International |
P-Channel Enhancement Mode MOSFET | |
6 | PJS6404 |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
7 | PJS6405 |
Pan Jit International |
P-Channel Enhancement Mode MOSFET | |
8 | PJS6600 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
9 | PJS6601 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
10 | PJS6602 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
11 | PJS6603 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
12 | PJS6630 |
Pan Jit International |
P-MOSFET Load Switch |