PPJS6600 30V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 30 / -30V Current 1.6 /-1.1A SOT-23 6L Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Halo.
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: SC0
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJS6601 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
2 | PJS6602 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
3 | PJS6603 |
Pan Jit International |
Complementary Enhancement Mode MOSFET | |
4 | PJS6630 |
Pan Jit International |
P-MOSFET Load Switch | |
5 | PJS6631 |
Pan Jit International |
P-MOSFET Load Switch | |
6 | PJS6400 |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
7 | PJS6401 |
Pan Jit International |
P-Channel Enhancement Mode MOSFET | |
8 | PJS6404 |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
9 | PJS6405 |
Pan Jit International |
P-Channel Enhancement Mode MOSFET | |
10 | PJS6413 |
PAN JIT |
20V P-Channel MOSFET | |
11 | PJS6414 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
12 | PJS6415AE |
Pan Jit International |
P-Channel MOSFET |