N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX4N60E is supplied in the SOT186A full pack, isolated package. PINNING PIN 1 2 3 case gate drain sour.
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Isolated package
PHX4N60E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 600 V
g
ID = 2.4 A RDS(ON) ≤ 2.5 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX4N60E is supplied in the SOT186A full pack, isolated package.
PINNING
PIN 1 2 3 case gate drain s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHX4N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
2 | PHX4N50E |
NXP |
PowerMOS transistor Isolated version of PHP4N50E | |
3 | PHX4ND40E |
NXP |
PowerMOS transistors FREDFET/ Avalanche energy rated | |
4 | PHX45NQ11T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
5 | PHX10N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
6 | PHX14NQ20T |
NXP |
N-channel TrenchMOS transistor | |
7 | PHX15N06E |
NXP |
PowerMOS transistor Isolated version of PHP20N06E | |
8 | PHX18NQ11T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
9 | PHX18NQ20T |
NXP |
N-channel enhancement mode field-effect transistor | |
10 | PHX1N40 |
NXP |
PowerMOS transistor | |
11 | PHX1N40E |
NXP |
PowerMOS transistor Isolated version of PHP2N40E | |
12 | PHX1N50E |
NXP |
PowerMOS transistor Isolated version fo PHP1N50E |