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N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applicatio.
ce voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. -55 MAX. 500 500 30 2.9 1.8 11.6 2.9 11.6 30 150 150 UNIT V V V A A A A A W ˚C ˚C AVALANCHE LIMITING VALUE SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. UNIT Drain-source non-repetitive ID = 5.3 A; VDD ≤ 50 V; VGS = 10 V; unclamped inductive turn-off RGS = 50 Ω energy Tj = 25˚C prior to surge T.
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|---|---|---|---|---|
| 1 | PHX4N40E |
NXP |
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| 2 | PHX4N60E |
NXP |
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| 3 | PHX4ND40E |
NXP |
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| 4 | PHX45NQ11T |
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| 5 | PHX10N40E |
NXP |
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| 6 | PHX14NQ20T |
NXP |
N-channel TrenchMOS transistor |
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| 7 | PHX15N06E |
NXP |
PowerMOS transistor Isolated version of PHP20N06E |
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| 8 | PHX18NQ11T |
NXP Semiconductors |
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| 9 | PHX18NQ20T |
NXP |
N-channel enhancement mode field-effect transistor |
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| 10 | PHX1N40 |
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| 11 | PHX1N40E |
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| 12 | PHX1N50E |
NXP |
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