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N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHT6N03T.
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHT6N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 12.8 5.9 8.3 150 30 UNIT V A A W ˚C mΩ PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g s 1 2 3 LIMITING VA.
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|---|---|---|---|---|
| 1 | PHT6N03LT |
NXP |
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| 2 | PHT6N06LT |
NXP |
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| 3 | PHT6N06T |
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| 4 | PHT6NQ10T |
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| 5 | PHT608C |
Nihon Inter Electronics |
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| 6 | PHT |
Vishay |
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| 7 | PHT-10x-xx-L-x |
Samtec |
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| 8 | PHT-11x-xx-L-x |
Samtec |
PRESS FIT .025 SQ POST HEADER |
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| 9 | PHT-12x-xx-L-x |
Samtec |
PRESS FIT .025 SQ POST HEADER |
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| 10 | PHT-13x-xx-L-x |
Samtec |
PRESS FIT .025 SQ POST HEADER |
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| 11 | PHT-14x-xx-L-x |
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PRESS FIT .025 SQ POST HEADER |
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| 12 | PHT-150-xx-L-x |
Samtec |
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