PHT6NQ10T - NXP

PHT6NQ10T N-channel TrenchMOS transistor

N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • d.c. to d.c. converters The PHT6NQ10T is supplied in the SOT223 surface mounting package. PINNING PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION SOT223 4 1 2 3 LIMITING VALUES Limiting values in accordance .

Features

• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 6.5 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:
• Motor and relay drivers
• d.c. to d.c. converters The PHT6NQ10T is supplied in the SOT223 surface mounting package. PINNING PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION SOT223 4 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PA.