PHT6N03LT - NXP

PHT6N03LT TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHT6N03LT is supplied in the SOT223 surface mounting package. PINNING PIN 1 2 3 tab gate drain source d.

Features

• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Surface mounting package PHT6N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 5.9 A g s RDS(ON) ≤ 30 mΩ (VGS = 5 V) RDS(ON) ≤ 28 mΩ (VGS = 10 V) SOT223 DESCRIPTION GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHT6N03LT is supplied in the S.