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PHT6N03T |
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| Part Number | PHT6N03T |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device features very low on-state resistance... |
| Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHT6N03T
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 12.8 5.9 8.3 150 30 UNIT V A A W ˚C mΩ
PINNING - SOT223
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
PIN CONFIGURATION
4
SYMBOL
d
g s
1
2
3
LIMITING VA... |
| Document |
 PHT6N03T Data Sheet
PDF 70.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHT6N03LT |
NXP |
TrenchMOS transistor Logic level FET |
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| 2 | PHT6N06LT |
NXP |
TrenchMOS transistor Logic level FET |
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| 3 | PHT6N06T |
NXP |
TrenchMOS transistor Standard level FET |
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| 4 | PHT6NQ10T |
NXP |
N-channel TrenchMOS transistor |
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| 5 | PHT608C |
Nihon Inter Electronics |
THYRISTOR |
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