NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK • High energ.
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Power management
• Loadswitch
• Linear mode voltage regulator
• Backlighting applications
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter sa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHPT610030NK |
nexperia |
NPN/NPN Transistor | |
2 | PHPT610030NPK |
nexperia |
NPN/PNP Transistor | |
3 | PHPT610030PK |
nexperia |
PNP/PNP Transistor | |
4 | PHPT610035NK |
NXP |
NPN/NPN high power double bipolar transistor | |
5 | PHPT610035NK |
nexperia |
NPN/NPN Transistor | |
6 | PHPT610035PK |
NXP |
PNP/PNP matched high power double bipolar transistor | |
7 | PHPT610035PK |
nexperia |
PNP/PNP Transistor | |
8 | PHPT61003PY |
nexperia |
PNP Transistor | |
9 | PHPT61002NYC |
nexperia |
NPN Transistor | |
10 | PHPT61002NYCLH |
nexperia |
NPN transistor | |
11 | PHPT61002PYC |
nexperia |
PNP Transistor | |
12 | PHPT61002PYCLH |
nexperia |
PNP transistor |