PHPT61002NYC - nexperia

PHPT61002NYC NPN Transistor

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency.

Features

• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation 3. Applications
• Load switch
• Power management
• Linear mode voltage regulator
• Backlighting apllications 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp ≤ 1 ms collector-emitter saturation resistance IC = 2 A; IB.