PHPT61002PYC - nexperia

PHPT61002PYC PNP Transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK • High ene.

Features

• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation 3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current tp ≤ 1 ms; pulsed collector-emitter saturation resistance IC = .