PHPT610035NK - NXP

PHPT610035NK NPN/NPN high power double bipolar transistor

NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK. NPN/PNP complement: PHPT610035NPK. 2. Features and benefits • • • • • • Current gain matching 5% High thermal power dissipation capability Suitable for high temperature app.

Features

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• Current gain matching 5% High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications
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• Current mirror Motor control Power management Backlighting applications Relay replacement differential amplifiers 4. Quick reference data Table 1. Symbol Per transistor VCEO IC Per transistor RCEsat collector-emitter saturation resistance IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; .