N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB12NQ15T is supplied in the SOT404.
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
VDSS = 150 V ID = 12.5 A
g
RDS(ON) ≤ 200 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD12NQ15T is supplied in the SOT4.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP12N10E |
NXP |
PowerMOS transistor | |
2 | PHP12N50E |
Philips |
PowerMOS transistors | |
3 | PHP120 |
Semtech Corporation |
7/500 & 15/000 Watt TVS Module | |
4 | PHP125 |
NXP |
P-channel enhancement mode MOS transistor | |
5 | PHP125N06LT |
NXP |
TrenchMOS transistor Logic level FET | |
6 | PHP125N06T |
NXP |
TrenchMOS transistor Standard level FET | |
7 | PHP129NQ04LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
8 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET | |
9 | PHP101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
10 | PHP1025 |
NXP |
P-channel enhancement mode MOS transistor | |
11 | PHP1035 |
NXP |
P-channel enhancement mode MOS transistor | |
12 | PHP108NQ03LT |
NXP |
TrenchMOS logic level FET |