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N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD11N06LT i.
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Logic level compatible
g
PHP11N06LT, PHB11N06LT PHD11N06LT
QUICK REFERENCE DATA
d
SYMBOL
VDSS = 55 V ID = 10.5 A RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
• d.c. to d.c. converters
• switched mode power supplies The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHP11N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 2 | PHP110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 3 | PHP110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 4 | PHP110NQ08T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |
|
| 5 | PHP112N06T |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 6 | PHP119NQ06T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |
|
| 7 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET |
|
| 8 | PHP101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |
|
| 9 | PHP1025 |
NXP |
P-channel enhancement mode MOS transistor |
|
| 10 | PHP1035 |
NXP |
P-channel enhancement mode MOS transistor |
|
| 11 | PHP108NQ03LT |
NXP |
TrenchMOS logic level FET |
|
| 12 | PHP109 |
NXP |
P-channel enhancement mode MOS transistor |
|