PHD36N03LT - NXP

PHD36N03LT N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Logic level compatible I Low gate charge 1.3 Applications I DC-to-DC converters I Switched-mode power supplies 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 17 mΩ I ID ≤ 43.4 A I Ptot ≤ 57.6 W 2. Pinning information Table.

Features

I Logic level compatible I Low gate charge 1.3 Applications I DC-to-DC converters I Switched-mode power supplies 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 17 mΩ I ID ≤ 43.4 A I Ptot ≤ 57.6 W 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain G [1] Simplified outline mb mb Symbol D 2 1 3 1 2 3 mbb076 S SOT428 (DPAK) [1] SOT78 (3-lead TO-220AB) It is not possible to make a connection to pin 2 of the SOT428 package. Philips Semiconductors PHD/PHP36N03LT N-channel TrenchMOS logic level FET 3. Ordering.