The PD57045 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1GHz. PD57045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in th.
of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57045 XPD57045 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57045S XPD57045S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature 0 Value 65 ±20 5 73 165 -65 to 165 Unit V V A W 0C 0 C THERMAL DATA (TCASE = 70 0C) R th(j-c) May 2000 Junction-Case Thermal Resistance 1.3 0 C/W 1/8 PD57045 PD57045S ELECTRICAL SPECIFICATION (TCASE = 25 0C) STATI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PD57045 |
STMicroelectronics |
RF POWER TRANSISTORS | |
2 | PD57045-E |
STMicroelectronics |
RF POWER transistor | |
3 | PD57045S-E |
STMicroelectronics |
RF POWER transistor | |
4 | PD57002-E |
STMicroelectronics |
RF POWER transistor | |
5 | PD57006-E |
STMicroelectronics |
RF POWER transistor | |
6 | PD57006S-E |
STMicroelectronics |
RF POWER transistor | |
7 | PD57018 |
STMicroelectronics |
RF POWER TRANSISTORS | |
8 | PD57018-E |
STMicroelectronics |
RF POWER transistor | |
9 | PD57018S |
STMicroelectronics |
RF POWER TRANSISTORS | |
10 | PD57030 |
STMicroelectronics |
RF POWER TRANSISTORS | |
11 | PD57030-E |
STMicroelectronics |
RF POWER transistor | |
12 | PD57030S |
STMicroelectronics |
RF POWER TRANSISTORS |