The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in.
■ Excellent thermal stability
■ Common source configuration
■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V
■ New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performanc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PD57006-E |
STMicroelectronics |
RF POWER transistor | |
2 | PD57002-E |
STMicroelectronics |
RF POWER transistor | |
3 | PD57018 |
STMicroelectronics |
RF POWER TRANSISTORS | |
4 | PD57018-E |
STMicroelectronics |
RF POWER transistor | |
5 | PD57018S |
STMicroelectronics |
RF POWER TRANSISTORS | |
6 | PD57030 |
STMicroelectronics |
RF POWER TRANSISTORS | |
7 | PD57030-E |
STMicroelectronics |
RF POWER transistor | |
8 | PD57030S |
STMicroelectronics |
RF POWER TRANSISTORS | |
9 | PD57045 |
STMicroelectronics |
RF POWER TRANSISTORS | |
10 | PD57045-E |
STMicroelectronics |
RF POWER transistor | |
11 | PD57045S |
STMicroelectronics |
RF POWER TRANSISTORS | |
12 | PD57045S-E |
STMicroelectronics |
RF POWER transistor |