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The PD57030 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1GHz. PD57030 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in th.
sembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57030 XPD57030 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57030S XPD57030S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature 0 Value 65 ±20 4 52.8 165 -65 to 175 Unit V V A W 0C 0C THERMAL DATA (TCASE = 70 0C) R th(j-c) May 2000 Junction-Case Thermal Resistance 1.8 0C/W 1/4 PD57030 PD57030S ELECTRICAL SPECIFICATION (TCASE = 25 0C) STATIC Symb.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PD57030 |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 2 | PD57030-E |
STMicroelectronics |
RF POWER transistor |
|
| 3 | PD57002-E |
STMicroelectronics |
RF POWER transistor |
|
| 4 | PD57006-E |
STMicroelectronics |
RF POWER transistor |
|
| 5 | PD57006S-E |
STMicroelectronics |
RF POWER transistor |
|
| 6 | PD57018 |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 7 | PD57018-E |
STMicroelectronics |
RF POWER transistor |
|
| 8 | PD57018S |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 9 | PD57045 |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 10 | PD57045-E |
STMicroelectronics |
RF POWER transistor |
|
| 11 | PD57045S |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 12 | PD57045S-E |
STMicroelectronics |
RF POWER transistor |
|