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The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in.
■ Excellent thermal stability
■ Common source configuration
■ POUT = 45 W with 13dB gain @ 945 MHz / 28 V
■ New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performan.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PD57045 |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 2 | PD57045S |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 3 | PD57045S-E |
STMicroelectronics |
RF POWER transistor |
|
| 4 | PD57002-E |
STMicroelectronics |
RF POWER transistor |
|
| 5 | PD57006-E |
STMicroelectronics |
RF POWER transistor |
|
| 6 | PD57006S-E |
STMicroelectronics |
RF POWER transistor |
|
| 7 | PD57018 |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 8 | PD57018-E |
STMicroelectronics |
RF POWER transistor |
|
| 9 | PD57018S |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 10 | PD57030 |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 11 | PD57030-E |
STMicroelectronics |
RF POWER transistor |
|
| 12 | PD57030S |
STMicroelectronics |
RF POWER TRANSISTORS |
|