PD55035STR1-E - STMicroelectronics

PD55035STR1-E RF power LDMOS transistor

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in.

Features

Order code Frequency VDD PD55035STR1-E 500 MHz 12.5 V
• Excellent thermal stability
• Common source configuration
• POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V
• New RF plastic package POUT 35 W Gain 16.9 dB Efficiency 62% Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology moun.