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The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the .
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Excellent thermal stability Common source configuration POUT = 8W with 17dB gain @ 500MHz / 12.5V New RF plastic package
PowerSO-10RF (formed lead)
Description
The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008’s super.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PD55008S-E |
STMicroelectronics |
RF POWER transistor |
|
| 2 | PD55003-E |
STMicroelectronics |
RF POWER transistor |
|
| 3 | PD55003L-E |
STMicroelectronics |
RF POWER transistor |
|
| 4 | PD55015-E |
STMicroelectronics |
RF power transistor |
|
| 5 | PD55015S-E |
STMicroelectronics |
LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |
|
| 6 | PD55025-E |
STMicroelectronics |
RF POWER transistor |
|
| 7 | PD55025S-E |
STMicroelectronics |
RF POWER transistor |
|
| 8 | PD55035-E |
STMicroelectronics |
RF POWER transistor |
|
| 9 | PD55035S-E |
STMicroelectronics |
RF POWER transistor |
|
| 10 | PD55035STR1-E |
STMicroelectronics |
RF power LDMOS transistor |
|
| 11 | PD551BA |
UNIKC |
P-Channel MOSFET |
|
| 12 | PD55FG120 |
ETC |
THYRISTOR MODULE |
|