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PD55035STR1-E |
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| Part Number | PD55035STR1-E |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V... |
| Features |
Order code
Frequency
VDD
PD55035STR1-E
500 MHz
12.5 V
• Excellent thermal stability • Common source configuration • POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V • New RF plastic package POUT 35 W Gain 16.9 dB Efficiency 62% Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology moun... |
| Document |
 PD55035STR1-E Data Sheet
PDF 326.27KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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